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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Avalanche Ratings
W DSS
Drain-Source Avalanche Energy
Single Pulse, V DD = 30 V, I D = 2.5 A
174
mJ
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–60
–60
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –60 V,
V GS = –20 V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–10
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = –250 μ A
–2
–2.6
–4
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = –250 μ A, Referenced to 25 ° C
5.7
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = –10 V, I D = –2.5 A
V GS = –4.5 V, I D = –2 A
95
163
300
500
m ?
V GS =–10 V, I D =–2.5 A, T J =125 ° C
153
513
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–12
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –2.5 A
5.5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
601
85
35
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –2.5 A,
12
10
19
6
11
2.4
21
20
34
12
15
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
2.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.5
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V, I S = –2.5 A
I F = –2.5 A,
d iF /d t = 100 A/μs
(Note 2)
–0.8
25
40
–1.2
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
mounted on a 1in
in pad of 2 oz
a) 42°C/W when
2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
2
c) 110°C/W when mounted on a
minimum pad.
copper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
NDT2955 Rev. C
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